Dr. Peng Gao

Peng GAO 高鹏

Assistant Professor, PI

School of Physics, Peking University, China

E-mail: p-gao@pku.edu.cn, Tel:+1-10-6274 5365

Group website: http://www.phy.pku.edu.cn/~pgao/home.html

Publications online link

个人简介

高鹏,北京大学物理学院研究员,博士生导师。2010年在中国科学院物理研究所获得凝聚态物理学博士学位,2010-2015年间在美国美国密歇根大学、美国布鲁克海文国家实验室、日本东京大学从事博士后研究工作。从博士期间开始一直从事透射电子显微学相关的研究,主要包括:(1)晶体材料的结构,缺陷结构;(2)外场下结构相变和缺陷演化;(3)离子在固态材料中的迁移动力学过程等。共发表论文40余篇,累计引用1000多次,其中包括9篇Nature子刊和1篇Science。曾获中科院宝洁奖、优秀毕业生奖,中科院物理所所长优秀奖、表彰奖等,曾入选日本振兴学会(JSPS)外国人特别研究员,中组部“青年千人计划”。

 

Education

v  July-2010, Ph.D. of physics, in Institute of Physics, Chinese Academy of Sciences, China

v  July-2005, B.S. of physics, in University of Science and Technology of China

 

Professional Experience

v  2015–now, Assistant Professor, in School of Physics, Peking University, China

v  2014–2015, Japan Society for the Promotion of Science (JSPS) foreign researcher fellow, in The University of Tokyo, Japan

v  2013–2014, Research Associate, in Sustainable Energy Technologies, Brookhaven National Laboratory, USA

v  2010 –2013, Research Fellow, in Department of Materials Science & Engineering, University of Michigan, USA

 

Honors and awards

v  Recruitment Program for Young Professionals (“the Thousand Talents Plan”), China, 2015

v  JSPS foreign researcher fellow, The University of Tokyo, Japan, 2015

v  Outstanding graduates (top 5%), Chinese Academy of Sciences, 2010.

v  Director Awards for excellent research, Institute of Physics, Chinese Academy of Sciences, 2009-2010.

v  Proctor & Gamble Prize for excellent research, Chinese Academy of Sciences, 2009.

 

Research interests and background

My primary area of interest is statically and dynamically characterizing functional (nano)-materials and devices through various transmission electron microscopy (TEM) and spectroscopy techniques.

 

Selected Publications (Total 42, including 9 Nat. Commun./Mater./Nano., 1 Science,  8 JACS/Nano Lett./ACS Nano, 3 Adv.Mater., 1000+SCI citation, “*”denotes corresponding author)

1.       P.Gao*, L.P.Wang, Y.-Y. Zhang*, Y. Huang, L. Liao, P. Sutter, K. H. Liu, D.P. Yu., and E.-G. Wang, “High-Resolution Tracking Asymmetric Lithium Insertion and Extraction and Local Structure Ordering in SnS2”, Nano Letters DOI: 10.1021/acs.nanolett.6b02136 (2016).

2.       P. Gao*,H.-J. Liu, Y.-L. Huang, Y.-H. Chu, R.Ishikawa, B. Feng, Y. Jiang, N. Shibata, E.-G. Wang, Y. Ikuhara, “Atomic Mechanism of Polarization-Controlled Surface Reconstruction in Ferroelectric Thin Films”, Nature Communications7, 11318 (2016).

3.       P. Gao*,L.P. Wang, Y.Y. Zhang,Y. Huang,K.H. Liu, “Atomic-Scale Probing of the Dynamics of Sodium Transport and Intercalation Induced Phase Transformations in MoS2”, ACS nano DOI: 10.1021/acsnano.5b04950 (2015).

4.       P. Gao, J. Britson, C. T. Nelson, J. R. Jokisaari, C. Duan, M. Trassin, S-H. Baek, H. Guo, L. Li, Y. Wang, Y.-H. Chu, A. M. Minor, C-B. Eom, R. Ramesh, L-Q. Chen, and X.Q. Pan*, “Ferroelastic domain switching dynamics under electrical and mechanical excitations”, Nature Communications 5:3801 | DOI: 10.1038/ncomms4801 (2014).

5.       Y. Yang, P. Gao, L.Z. Li, X. Q. Pan, S. Tappertzhofen, S. H. Choi, R. Waser, I. Valov, W. D. Lu*, “Electrochemical dynamics of nanoscale metallic inclusions in dielectrics”, Nature Communications 5: 4232 doi:10.1038/ncomms5232 (2014).

6.       P. Gao, J. Britson, J. R. Jokisaari, C. T. Nelson, S.-H. Baek, Y. Wang, C.-B. Eom,L.-Q. Chen and X.Q. Pan*, “Atomic Scale Mechanisms of Ferroelastic Domain Wall Mediated Ferroelectric Switching”, Nature Communications4:2791 doi: 10.1038/ncomms3791 (2013).7.       S. Lee, C. Tarantini, P. Gao, J. Jiang, J. D. Weiss,       F. Kametani, C. M. Folkman, Y. Zhang, X. Q. Pan,    E. E. Hellstrom,D. C. Larbalestier and C. B. Eom* “Artificially engineered superlattices of pnictide superconductors”, Nature Materials 12, 392-396 (2013).

8.       P. Gao, C. T. Nelson, J. R. Jokisaari, Y. Zhang, S-H. Baek, C. W. Bark, E-G Wang, Y. M. Liu, J. G. Li, C-B Eom, and X. Q. Pan* “Direct observations of retention failure in ferroelectric memories”. Advanced Materials 24, 1106-1110 (2012).

9.       Y. Yang, P. Gao, S. Gaba, T. Chang, X. Q. Pan, and W. Lu*, “Observation of Conducting Filament Growth in Nanoscale Resistive Memories”. Nature Communications 3,732 (2012).

10.   C. T. Nelson, P. Gao, J. R. Jokisaari, K. Zhang, C. Heikes, C. Adamo, A. Melville, B. Winchester, Y. J. Gu, Y. M. Liu, S-H Baek, C. M. Folkman, E-G. Wang, C-B Eom, J. Y. Li, L-Q. Chen, D. G. Schlom, and X. Q. Pan*, “Domain dynamics during ferroelectric switching”. Science 334, 968 (2011).

11.   P. Gao, C. T. Nelson, J. R. Jokisaari, S-H Baek, C. W Bark, Y. Zhang, E-G. Wang, D. G. Schlom, C-B. Eom, and X. Q. Pan*, “Revealing the role of defects in ferroelectric switching with atomic resolution”. Nature Communications 2, 591 (2011).

12.   P. Gao, Z. C. Kang, W. Y. Fu, W. L. Wang, X. D. Bai* and E. G. Wang*, “Electrically driven redox process of cerium oxides”. J. Am. Chem. Soc 132, 4197-4201 (2010).

 

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