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ICQM Member Jian Wang’s research on topological insulators gets the media attention (2013.10.20)
量子材料中心王健研究员在拓扑绝缘体方面的工作引起国际媒体的关注(2013.10.20)

 The paper “Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs(111) substrates: a potential route to fabricate topological insulator p-n junction” was highlighted in AIP advances and chose as Editor’s picks. (http://scitation.aip.org/content/aip/journal/adva) Further, the work got the international media attention and was reported by a number of international media such as EurekAlert and Science Daily, named by “Quantum conductors benefit from growth on smooth foundations”. (http://www.sciencedaily.com/releases/2013/10/131011135036.htm)
The work was performed in collaboration with Dr. Zhaoquan Zeng, Prof. Zhiming M. Wang and their coworkers at University of Arkansas. In the study, the researchers grew two types of TI materials, n-type bismuth telluride (Bi2Te3) and p-type antimony telluride (Sb2Te3) on a substrate material commonly used by the semiconductor industry, gallium arsenide (GaAs). The work lays an important foundation on the further industrial applications based on topological insulators and paves a way for exploring topological insulator p-n junctions.
 量子材料中心王健研究员的文章《Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs(111) substrates: a potential route to fabricate topological insulator p-n junction》得到美国物理学会(AIP advances)的重点关注,被杂志编辑选为推荐文章之一。(http://scitation.aip.org/content/aip/journal/adva)这项工作发表以后,EurekAlertScience Daily等多家国际科技新闻网站以 “Quantum conductors benefit from growth on smooth foundations为题进行了专门报道。(http://www.sciencedaily.com/releases/2013/10/131011135036.htm)
这项研究主要由北京大学量子材料中心的王健研究组和美国Arkansas大学的曾兆权博士后、王志明教授等人合作完成。在这项工作中,研究者们成功地在工业上广泛使用的半导体材料砷化镓(GaAs)衬底上制备出两种性能优越的拓扑绝缘体薄膜材料,分别是n碲化铋p型碲化。这就为拓扑绝缘体在未来信息产业的应用方面打下了坚实的基础,尤其是为拓扑绝缘体p-n结器件的制备和研发开辟了道路。