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陈剑豪

量子材料中心副教授,博士生导师

 

课题组主页:http://www.phy.pku.edu.cn/jhchen/

教师主页:http://faculty.pku.edu.cn/chenjianhao/zh_CN/index/6210/list/index.htm

 

工作简历:

2013年至今 北京大学物理学院量子材料科学中心 研究员、副教授、博士生导师

2018年至今 北京量子信息科学研究院 兼聘研究员

2018年至今 北京轻元素量子材料研究院 兼聘研究员

2019年至今 纳米器件物理与化学教育部重点实验室 副主任

 

承担项目:

2019年起 国家重点研发计划项目“自旋超导等新型关联体系的量子态” 项目负责人

2019年起 国家自然科学基金委重点项目“拓扑与关联体系的原位输运与扫描隧道电势测量研究” 项目负责人

 

主要研究方向:

实验手段:新型超高真空原位量子输运测量仪器、低温强磁场下的输运、电容测量

实现功能:实现对低维/纳米电子体系相互作用(如电子-电子相互作用、自旋-轨道耦合强度、电子-杂质相互作用)的精确控制,及在低温和高磁场条件下的原位量子输运测量。

实验内容:低维材料器件的介观量子物性研究,具体包括:

(1)  低维量子材料、低维复合结构的量子输运性质表征与应用研究;

(2)  低维拓扑材料的量子输运表征;

(3)  低维磁性材料的物态研究

 

过去的主要工作及获得的成果:

  • 在二维材料温度诱导的结构相变中发现非常规的Barkhausen效应,大大扩展了Barkhausen物理的适用范畴;
  • 获得TaIrTe4中心反演对称性破缺的实验证据,证明TaIrTe4中的第二类外尔费米子是可以存在的; 发现TaIrTe4中外尔点导致的非线性光电效应;
  • 发现对称性破缺的石墨烯半整数量子霍尔态其中填充数为8的量子态在极低温出现反常的温度相关稳定性,可能来自边缘态畴界马约拉纳零能级的影响;
  • 量化测量带电杂质对石墨烯输运性质的影响,解决了学界在关于石墨烯最主要散射源的持久争论,证明带电杂质为高质量石墨烯器件的最主要散射源;
  • 量化测量石墨烯声学声子及器件基底极化光学声子对石墨烯载流子的散射,实验发现在只考虑声子散射的情况下石墨烯为室温下最好的导体,导电率高于铜,电子迁移率远高于常规半导体材料,并在存在各种散射源的情况下对石墨烯电子迁移率的极限作出预测;
  • 量化测量晶格缺陷对石墨烯输运性质的影响,并发现晶格缺陷引入了多种量子散射效应,如弱局域化效应;
  • 发现单层石墨烯的晶格缺陷有磁性并与石墨烯的载流子有很强的自旋相互作用而导致Kondo效应;

 

论文及其它学术活动:

至今发表40篇论文,包括多篇Nature子刊,Physical Review Letters,Advanced Materials等。Google Scholar总引用超过9000次。其中6篇文章入选ESI高引用文章。2019年以通讯作者在Nature Materials发表的拓扑光电器件成果,并入选同期杂志的封面特写。受邀撰写了剑桥大学出版社《二维材料:性质与器件》书籍的第二章。申请国内专利8项,其中4项已授权,4项进入实审阶段。

在国际会议上发表特邀学术报告多次,包括APS March Meeting, MRS Spring Meeting, International Conference on Low Temperature Physics, AVS International Symposium and Exhibition,中国物理学会秋季会议,中国真空学会年会等,并应邀在哈佛大学,麻省理工学院,斯坦福大学,加州大学伯克利分校,IBM Watson 研究中心, IBM Almaden 研究中心等大学和科研院所做过学术报告。担任多个著名国际学术会议组委,包括美国材料学会春季会议专题研讨会等。

现为多个国际著名SCI期刊审稿人,包括PRL、PRB、Advanced Materials、Advanced Energy Materials、2D Materials、Nanotechnology、Journal of Physics: Condensed Matter、IEEE Electron Device Letters等等。现为Journal of NanoMaterials客座编辑。

 

主要论文及媒体报道:

特邀综述

  1. Chuanwu Cao, Jian-Hao Chen*, “Quantum Spin Hall Materials”, Advanced Quantum Technology, DOI: 10.1002/qute.201900026 (2019)

·  入选Advanced Quantum Technology当期back cover, DOI: 10.1002/qute.201970063  (2019)

研究文章

·   Shimin Cao, Chuanwu Cao, Shibing Tian and Jian-Hao Chen*, “Evidence of tunable magnetic coupling in hydrogenated graphene”, Physical Review B, in press (2020)

·   Shili Yan, Hai Huang, Zhijian Xie, Guojun Ye, Xiao-Xi Li, Takashi Taniguchi, Kenji Watanabe, Zheng Han, Xianhui Chen*, Jianlu Wang*, Jian-Hao Chen*, “Reliable nonvolatile memory black phosphorus ferroelectric field effect transistors with van der Waals buffer”, ACS Applied Materials & Interfaces 11, 42358 (2019)

·   Hanwen Wang, Mao-Lin Chen, Mengjian Zhu, Yaning Wang, Baojuan Dong, Xingdan Sun, Xiaorong Zhang, Shimin Cao, Xiaoxi Li, Jianqi Huang, Lei Zhang, Weilai Liu, Dongming Sun, Yu Ye, Kepeng Song, Jianjian Wang, Yu Han, Teng Yang*, Huaihong Guo, Chengbing Qin*, Liantuan Xiao, Jing Zhang, Jian-Hao Chen*, Zheng Han*, Zhidong Zhang, "Gate tunable giant anisotropic resistance in ultra-thin GaTe", Nature Communications 10, 2302 (2019)

·   Junchao Ma, Qiangqiang Gu, Yinan Liu, Jiawei Lai, Peng Yu, Xiao Zhuo, Zheng Liu, Jian-Hao Chen*, Ji Feng*, and Dong Sun*, "Nonlinear Photoresponse of Type-II Weyl Semimetals", Nature Materials 18, 476 (2019)

媒体报道

·  Cover article for Nature Materials 18, issue 5, May 2019.

·  Lighting up Weyl semimetals”, News and Views, Nature Materials 18, 428 (2019).

·   Chuanwu Cao, Xin Liu, Xiao Ren, Xianzhe Zeng, Dong Sun, Shuyun Zhou, Yang Wu, Yuan Li, Jian-Hao Chen*, "Barkhausen effects in the first order structural phase transition in type-II Weyl semimetal MoTe2", 2D Materials 5, 044003 (2018)

媒体报道

·  Benchtop cosmology exploits solid-states systems”, Physics World Characterization and Modeling (Media Report), November 10, 2018.

·   Chaoyi Cai, Jian-Hao Chen*, “Electronic transport properties of Co cluster decorated graphene”, Chinese Physics B 27(6), 067304 (2018)

媒体报道

·  In situ measurements reveal cobalt-decorated graphene behaviour”, Physics World Research Update (Media Report), June 28, 2018.

·   Yinan Liu, Qiangqiang Gu, Yu Peng, Shaomian Qi, Na Zhang, Yinong Zhang, Xiumei Ma, Rui Zhu, Lianming Tong, Ji Feng*, Zheng Liu* and Jian-Hao Chen*, “Raman Signatures of Broken Inversion Symmetry and In-plane Anisotropy in Type-II Weyl Semimetal Candidate TaIrTe4”, Advanced Materials 30, 1706402 (2018)

· Invited to show case the result in 2018 China National Science and Technology Week and Beijing Science and Technology Week, May 19, 2018.

·   Xin Liu*, Zhiran Zhang, Chaoyi Cai, Shibing Tian, Satya Kushwaha, Hong Lu, Takashi Taniguchi, Kenji Watanabe, Robert J Cava, Shuang Jia* and Jian-Hao Chen*, “Gate tunable magneto-resistance of ultra-thin WTe2 devices”, 2D Materials 4, 021018 (2017)

·   Shibing Tian, Pengjie Wang, Xin Liu, Junbo Zhu, Hailong Fu, Takashi Taniguchi, Kenji Watanabe, Jian-Hao Chen* and Xi Lin*, “Nonlinear transport of graphene in the quantum Hall regime”, 2D Materials 4, 015003 (2016)

·   J. -H. Chen, G. Autès, N. Alem, F. Gargiulo, A. Gautam, M. Linck, C. Kisielowski, O. V. Yazyev, S. G. Louie and A. Zettl, “Growth of a Linear Defect in Graphene for Gate-Tunable Valley Filtering”, Physical Review B 89, 121407(R) (2014)

·   J. -H. Chen, L. Li, W. G. Cullen, E. D. Williams, M. S. Fuhrer,

Origin of logarithmic resistance correction in graphene Reply”, Nature Physics 8, 353(2012) 

·   J. -H. Chen, L. Li, W. G. Cullen, E. D. Williams, M. S. Fuhrer, “Tunable Kondo Effect in Graphene with Defects”, Nature Physics 7, 535(2011)  ESI高引用文章)

媒体报道

·  New way to control magnetic properties of graphene discovered”, Science Daily, April 18, 2011.

·  Scientists make magnetic new graphene discovery”, PhysOrg.com, April 18, 2011.

·   J. -H. Chen, W. G. Cullen, C. Jang, M. S. Fuhrer, E. D. Williams, “Defect Scattering in Graphene”, Physical Review Letters 102, 236805 (2009) ESI高引用文章)

·   J. -H. Chen, C. Jang, S. Xiao, M. Ishigami, M. S. Fuhrer, “Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2”, Nature Nanotechnology 3, 206 (2008)  ESI高引用文章)

媒体报道

·  Graphene could be the new silicon”, Scientific American News Blog, March 31, 2008.

·  Is Graphene the new silicon?”, NSF Press Release 08-048, March 27, 2008.

·  Carbon could enable fastest chips”, by Colin Johnson, EE Times, March 25, 2008.

·   J. -H. Chen, C. Jang, S. Adam, M. S. Fuhrer, E. D. Williams, M. Ishigami, “Charged Impurity Scattering in Graphene”, Nature Physics 4, 377 (2008)  ESI高引用文章)

 

培养研究生情况:

每年拟招研究生1-2



博士后聘用:
有空缺,面议

 

联系方式:

Phone: 62754537
Email: chenjianhao (at) pku.edu.cn