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ICQM Member Jian Wang’s research on topological insulators gets the media attention (2013.10.20)

 The paper “Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs(111) substrates: a potential route to fabricate topological insulator p-n junction” was highlighted in AIP advances and chose as Editor’s picks. (http://scitation.aip.org/content/aip/journal/adva) Further, the work got the international media attention and was reported by a number of international media such as EurekAlert and Science Dailynamed by “Quantum conductors benefit from growth on smooth foundations”. (http://www.sciencedaily.com/releases/2013/10/131011135036.htm)
The work was performed in collaboration with Dr. Zhaoquan Zeng, Prof. Zhiming M. Wang and their coworkers at University of Arkansas. In the study, the researchers grew two types of TI materials, n-type bismuth telluride (Bi2Te3) and p-type antimony telluride (Sb2Te3) on a substrate material commonly used by the semiconductor industry, gallium arsenide (GaAs). The work lays an important foundation on the further industrial applications based on topological insulators and paves a way for exploring topological insulator p-n junctions.